Conditions of Formation of α-, β-Мodifications of Ge3N4 and Their Mixtures (short communication)

Abstract

Germanium nitride Ge₃N₄ is used in various fields of science and technology (micro- and nanoelectronics, photocatalysis, luminescence, energy storage and others). Among the experimentally discovered and theoretically predicted crystal modifications of Ge₃N₄ at ordinary pressures and temperatures, only the α- and β-phases of the nitride are stable. There are conflicting data in the literature on the conditions for the formation of these phases. The main methods for obtaining Ge₃N₄ are the nitriding of elemental germanium and its dioxide with ammonia. In the present work, the influence of the degree of ammonia humidity on the possibility of the formation of α- and β-phases was studied. It is shown that by varying this degree of humidity and the temperature of the process, it is possible to obtain nitride in the form of both pure α- and β-Ge₃N₄, as well as their mixtures with practically any ratio.